NXP USA Inc. JFET, N-Channel, part number J112-126. This component features a drain-source voltage (Vdss) of 40V and a maximum power dissipation of 400mW. The drain current at Vgs=0 (Idss) is 5mA @ 15V, with a gate-source cutoff voltage (VGS off) of 1V @ 1µA. The device exhibits a typical on-resistance (RDS(On)) of 50 Ohms. Input capacitance (Ciss) is a maximum of 6pF @ 10V (VGS). This JFET is presented in a TO-92-3 (TO-226-3, TO-92-3 Formed Leads) package suitable for through-hole mounting. The operating temperature range extends to 150°C (TJ). Packaging is Tape & Box (TB). This device is commonly utilized in general-purpose switching and amplification applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 50 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
Request a Quote
Clients Also Buy
J174,126
JFET P-CH 30V TO92-3
PMBFJ620,115
JFET 2N-CH 25V 6TSSOP
BFR31,215
JFET N-CH 10MA SOT23
