NXP USA Inc. JFET, N-Channel. The J111-126 is housed in a TO-92-3 package with a maximum power dissipation of 400 mW. It features a drain-to-source voltage (Vdss) of 40 V and a gate-source breakdown voltage (V(BR)GSS) of 40 V. The device exhibits a typical Idss of 20 mA at 15 V (Vgs=0) and a Vgs(off) of 10 V at 1 µA. Input capacitance (Ciss) is rated at a maximum of 6 pF at 10 V (Vgs). This component is suitable for through-hole mounting and operates at junction temperatures up to 150°C. Applications include general-purpose amplification and switching in various electronic systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 30 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
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