NXP USA Inc. JFET, N-Channel, J110-126. This JFET offers a Drain to Source Voltage (Vdss) of 25 V with a maximum power dissipation of 400 mW. Key electrical parameters include a Drain Current (Idss) of 10 mA @ 5 V and a Voltage-Breakdown (V(BR)GSS) of 25 V. The cutoff voltage (VGS off) is specified at 4 V @ 1 µA, with an input capacitance (Ciss) not exceeding 30 pF @ 0 V. The device is housed in a TO-92-3 package, suitable for through-hole mounting. Operating temperature range extends to 150°C (TJ). This component is commonly utilized in audio amplification and switching applications across various industrial and consumer electronics sectors. Packaging is supplied in Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 0V |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 18 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10 mA @ 5 V |
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