NXP USA Inc. JFET, N-Channel, J109-126. This TO-92-3 packaged component features a drain-to-source breakdown voltage (Vdss) of 25V and a rated power dissipation of 400mW. The current, drain-source (Idss) at zero gate-source voltage (Vgs=0) is 80mA at 15V. The cutoff voltage (VGS off) is specified at 2V for a drain current of 1µA. Input capacitance (Ciss) is a maximum of 30pF at 10V (VGS). The device is available in Tape & Box packaging and is designed for through-hole mounting. This component finds application in various electronic systems, including audio amplification and switching circuits, across industries such as consumer electronics and industrial automation. Its operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 10V (VGS) |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 12 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 2 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 80 mA @ 15 V |
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