NXP USA Inc. JFET, N-Channel, part number J108-126. This TO-92-3 packaged component offers a 25V drain-to-source voltage (Vdss) and a maximum power dissipation of 400mW. Key electrical characteristics include a drain current (Idss) of 80mA at 5V (Vgs=0) and a gate-source cutoff voltage (VGS off) of 10V at 1µA. The NXP J108-126 features a low on-resistance (RDS(On)) of 8 Ohms and an input capacitance (Ciss) of 30pF maximum at 0V. Designed for through-hole mounting, this component operates up to a junction temperature of 150°C and is supplied in Tape & Box (TB) packaging. This JFET is commonly utilized in various industrial and consumer electronics applications requiring precise signal amplification and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 30pF @ 0V |
| Voltage - Breakdown (V(BR)GSS) | 25 V |
| Supplier Device Package | TO-92-3 |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 400 mW |
| Resistance - RDS(On) | 8 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 10 V @ 1 µA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 80 mA @ 5 V |
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