NXP USA Inc. BSR58-215 is an N-Channel JFET designed for high-performance applications. This component features a drain-to-source voltage (Vdss) of 40 V and a breakdown voltage (V(BR)GSS) of 40 V, ensuring robust operation. The typical static drain current (Idss) is 8 mA at 15 V, with a gate-source cutoff voltage (VGS off) of 800 mV at 0.5 nA. The device offers a low on-resistance (RDS(On)) of 60 Ohms. With a maximum power dissipation of 250 mW, it is suitable for operation across a wide temperature range up to 150°C (TJ). The BSR58-215 is supplied in a compact SOT-23 (TO-236AB) surface mount package, delivered on tape and reel. This JFET is commonly utilized in general-purpose switching and amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 250 mW |
| Resistance - RDS(On) | 60 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 800 mV @ 0.5 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 8 mA @ 15 V |
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