NXP USA Inc. BSR57-215 is an N-Channel Junction Field-Effect Transistor (JFET) designed for surface-mount applications. This component features a drain-to-source voltage (Vdss) of 40V and a maximum power dissipation of 250mW. The device exhibits a typical drain current (Idss) of 20mA at 15V and a gate-source cutoff voltage (VGS off) of 5V. With a breakdown voltage (V(BR)GSS) of 40V, it is suitable for signal switching and amplification in various industrial and consumer electronics applications. The BSR57-215 is supplied in a standard SOT-23 (TO-236AB) package and is available on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 250 mW |
| Resistance - RDS(On) | 40 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 5 V @ 0.5 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
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