BSR56,215
JFET N-CH 40V 20MA SOT23Manufacturer: NXP USA Inc.
Categories: JFETs
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NXP USA Inc. BSR56-215 is an N-Channel JFET designed for high-frequency applications. This component features a drain-source breakdown voltage (Vdss) of 40V and a maximum drain current (Id) of 20mA. The gate-source cutoff voltage (VGS off) is 4V at 0.5 nA, with a typical Idss of 50 mA at 15V. Optimized for surface mounting, it is supplied in a compact SOT-23 (TO-236AB) package, presented on tape and reel. With a maximum power dissipation of 250 mW and an operating temperature range up to 150°C, the BSR56-215 is suitable for use in various electronic systems including RF amplification and switching circuits. Its on-resistance (RDS(On)) is rated at 25 Ohms.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Current Drain (Id) - Max | 20 mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 40 V |
| Power - Max | 250 mW |
| Resistance - RDS(On) | 25 Ohms |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 0.5 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 mA @ 15 V |
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