NXP USA Inc. BFR31-215 is an N-Channel JFET with a maximum drain current (Id) of 10 mA and a drain-to-source voltage (Vdss) of 25 V. This device features a maximum power dissipation of 250 mW and is housed in a SOT-23 (TO-236AB) surface-mount package. The cutoff voltage (VGS off) is 250 mV at 0.5 nA, and the zero-gate-voltage drain current (Idss) is 1 mA at 10 V. Input capacitance (Ciss) is specified at a maximum of 4 pF at 10 V. The BFR31-215 is suitable for applications in RF amplification and switching circuits, commonly found in wireless communication systems and general-purpose analog signal processing. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Current Drain (Id) - Max | 10 mA |
| Supplier Device Package | SOT-23 (TO-236AB) |
| Drain to Source Voltage (Vdss) | 25 V |
| Power - Max | 250 mW |
| Voltage - Cutoff (VGS off) @ Id | 2.5 V @ 0.5 nA |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 10 V |