SI9936DY,518
MOSFET 2N-CH 30V 5A 8SOManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ SI9936DY-518 is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 5A at 25°C. With a low on-resistance (Rds On) of 50mOhm at 5A and 10V, it minimizes conduction losses. The device operates with a logic-level gate, simplifying drive requirements. Key parameters include a gate charge (Qg) of 35nC maximum at 10V and a threshold voltage (Vgs(th)) of 1V maximum at 250µA. The SI9936DY-518 is housed in an 8-SOIC package for surface mounting and has a maximum power dissipation of 900mW. Operating temperature range is up to 150°C. This MOSFET array is suitable for use in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 900mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
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