PMWD30UN,518
MOSFET 2N-CH 30V 5A 8TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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The NXP USA Inc. TrenchMOS™ PMWD30UN-518 is a 30V, 2 N-Channel MOSFET array in an 8-TSSOP package. This device offers a continuous drain current of 5A at 25°C and a maximum power dissipation of 2.3W. Key parameters include a low Rds(on) of 33mOhm at 3.5A and 4.5V, a gate charge of 28nC at 5V, and input capacitance of 1478pF at 10V. It features a logic level gate and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial power management applications. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1478pF @ 10V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 1mA |
| Supplier Device Package | 8-TSSOP |
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