PMWD26UN,518
MOSFET 2N-CH 20V 7.8A 8TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ MOSFET array, part number PMWD26UN-518, offers a 20V drain-to-source voltage with a continuous drain current of 7.8A at 25°C. This dual N-channel device features a low Rds(on) of 30mOhm maximum at 3.5A and 4.5V, and a logic level gate for enhanced drive flexibility. With a maximum power dissipation of 3.1W, it is suitable for applications requiring efficient switching. The device's low gate charge of 23.6nC at 4.5V and input capacitance of 1366pF at 16V contribute to its performance. Packaged in an 8-TSSOP (0.173", 4.40mm width) on tape and reel, it is designed for surface mounting. The PMWD26UN-518 is utilized in various industrial segments including consumer electronics and telecommunications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A |
| Input Capacitance (Ciss) (Max) @ Vds | 1366pF @ 16V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 23.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 1mA |
| Supplier Device Package | 8-TSSOP |
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