PMWD20XN,118
MOSFET 2N-CH 20V 10.4A 8TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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NXP USA Inc. TrenchMOS™ PMWD20XN-118 is a 20V dual N-channel MOSFET array designed for high-efficiency power switching applications. This component features a low on-resistance of 22mOhm at 4.2A and 10V, coupled with a continuous drain current capability of 10.4A at 25°C. The logic-level gate input simplifies drive requirements, with a Vgs(th) of 1.5V at 1mA. Key parameters include a gate charge of 11.6nC at 4.5V and input capacitance of 740pF at 16V. Packaged in a compact 8-TSSOP, this surface-mount device dissipates up to 4.2W and operates across a wide temperature range of -55°C to 150°C. Its robust construction and performance characteristics make it suitable for automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 10.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 16V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 4.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | 8-TSSOP |