PMWD19UN,518
MOSFET 2N-CH 30V 5.6A 8TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ MOSFET array, part number PMWD19UN-518, features two N-channel TrenchMOS transistors in a compact 8-TSSOP package. This device offers a 30V drain-source breakdown voltage and a continuous drain current capability of 5.6A at 25°C. The MOSFET array is designed for surface mounting and boasts a low on-resistance of 23mOhm maximum at 3.5A and 4.5V Vgs. Key electrical parameters include a gate charge of 28nC maximum at 5V and an input capacitance of 1478pF maximum at 10V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.3W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 1478pF @ 10V |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 1mA |
| Supplier Device Package | 8-TSSOP |
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