PMWD16UN,518
MOSFET 2N-CH 20V 9.9A 8TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PMWD16UN-518 is a 20V, dual N-channel MOSFET array designed for surface mount applications. This component features a low Rds(on) of 19mOhm at 3.5A and 4.5V, with a continuous drain current capability of 9.9A. The logic level gate allows for direct interface with lower voltage microcontrollers. Key parameters include a gate charge (Qg) of 23.6nC (max) at 4.5V and an input capacitance (Ciss) of 1366pF (max) at 16V. The device is packaged in an 8-TSSOP with dimensions of 4.40mm width and is supplied on tape and reel. This MOSFET array is suitable for power management and switching applications across various industries, including automotive and industrial automation. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 1366pF @ 16V |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 23.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 1mA |
| Supplier Device Package | 8-TSSOP |
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