PMWD15UN,518
MOSFET 2N-CH 20V 11.6A 8TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ MOSFET array, part number PMWD15UN-518, is a dual N-channel device featuring a 20V drain-source breakdown voltage. This surface mount component, packaged in an 8-TSSOP, offers a continuous drain current of 11.6A at 25°C and a typical Rds(On) of 18.5mOhm at 5A and 4.5V. The logic-level gate facilitates lower drive voltages. Key parameters include a maximum power dissipation of 4.2W, a gate charge of 22.2nC (max) at 4.5V, and an input capacitance of 1450pF (max) at 16V. Operating temperature ranges from -55°C to 150°C. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 4.2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 11.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 16V |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 22.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 700mV @ 1mA |
| Supplier Device Package | 8-TSSOP |
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