PMGD8000LN,115
MOSFET 2N-CH 30V 0.125A 6TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PMGD8000LN-115 is a dual N-channel MOSFET array designed for surface mount applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 125mA at 25°C. The device exhibits a low Rds(on) of 8 Ohms maximum at 10mA and 4V, with a logic level gate for enhanced compatibility. Key parameters include a gate charge (Qg) of 0.35nC maximum at 4.5V and an input capacitance (Ciss) of 18.5pF maximum at 5V. With a maximum power dissipation of 200mW and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for use in portable electronics and general-purpose switching applications. The device is supplied in a 6-TSSOP package, delivered on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 200mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 125mA |
| Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 5V |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | 6-TSSOP |
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