PMGD400UN,115
MOSFET 2N-CH 30V 0.71A 6TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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NXP USA Inc. TrenchMOS™ PMGD400UN-115 is a dual N-channel MOSFET array in a 6-TSSOP package designed for demanding applications. This device features a 30V drain-source voltage and a continuous drain current of 710mA at 25°C, with a low Rds(on) of 480mOhm at 200mA and 4.5V. The logic-level gate technology ensures compatibility with lower voltage drive signals. With a maximum power dissipation of 410mW and a wide operating temperature range of -55°C to 150°C, it is suitable for use in automotive, industrial, and consumer electronics. Key characteristics include an input capacitance of 43pF at 25V and a gate charge of 0.89nC at 4.5V. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 410mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 710mA |
| Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 25V |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 200mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.89nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSSOP |
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