PMGD175XN,115
MOSFET 2N-CH 30V 0.9A 6TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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NXP USA Inc. PMGD175XN-115 is a dual N-channel MOSFET array designed for applications requiring efficient switching. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 900mA at 25°C. The low on-resistance of 225mOhm at 1A and 4.5V (Vgs) ensures minimal power loss. With a logic level gate, it offers compatibility with lower voltage control signals. The device boasts a maximum power dissipation of 390mW and a gate charge (Qg) of 1.1nC at 4.5V. Packaged in a 6-TSSOP, this surface-mount component operates within a temperature range of -55°C to 150°C. Its robust specifications make it suitable for use in consumer electronics and general-purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 900mA |
| Input Capacitance (Ciss) (Max) @ Vds | 75pF @ 15V |
| Rds On (Max) @ Id, Vgs | 225mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.1nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-TSSOP |
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