PMGD130UN,115
MOSFET 2N-CH 20V 1.2A 6TSSOPManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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NXP USA Inc. presents the PMGD130UN-115, a dual N-channel MOSFET array configured in a compact 6-TSSOP package. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 1.2A at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 145mOhm at 1.2A and 4.5V, coupled with a logic-level gate for enhanced drive compatibility. Key parameters include a gate charge (Qg) of 1.3nC at 4.5V and an input capacitance (Ciss) of 83pF at 10V. Designed for efficient power management, it dissipates a maximum power of 390mW and operates across an extended temperature range of -55°C to 150°C. This component is commonly utilized in portable electronics, power management circuits, and automotive applications. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 1.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-TSSOP |
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