PMDPB95XNE,115
MOSFET 2N-CH 30V 2.4A 6HUSONManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. presents the PMDPB95XNE-115, a dual N-channel MOSFET array in a 6-HUSON (2x2) surface mount package. This component offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.4A at 25°C. Featuring a logic level gate, it has a maximum Rds On of 120mOhm at 2A and 4.5V, with a typical gate charge (Qg) of 2.5nC at 4.5V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 475mW. This MOSFET array is suitable for applications in automotive and industrial sectors where efficient switching and space optimization are critical. The PMDPB95XNE-115 is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 475mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 15V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-HUSON (2x2) |
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