PMDPB70EN,115
MOSFET 2N-CH 30V 3.5A 6HUSONManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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NXP USA Inc. PMDPB70EN-115 is a dual N-channel MOSFET array designed for efficient power switching applications. This component offers a Drain to Source Voltage (Vdss) of 30V and a continuous Drain current (Id) capability of 3.5A at 25°C. Featuring a logic level gate, the PMDPB70EN-115 exhibits a low Rds On of 57mOhm at 3.5A and 10V, with a maximum Gate Charge (Qg) of 4.5nC at 10V. Its input capacitance (Ciss) is rated at a maximum of 130pF at 15V. The device operates within an extended temperature range of -55°C to 150°C and is housed in a compact 6-HUSON (2x2) surface mount package. The power dissipation capability is 510mW. This MOSFET array is suitable for use in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-UFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 510mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 15V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-HUSON (2x2) |
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