PMDPB65UP,115
MOSFET 2P-CH 20V 3.5A 6HUSONManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. PMDPB65UP-115, a dual P-channel MOSFET array, offers 20V Vdss with a continuous drain current capability of 3.5A at 25°C. This component features a logic level gate, a maximum Rds(On) of 70mOhm at 1A and 4.5V, and a power dissipation of 520mW. The device is housed in a 6-HUSON (2x2) package, suitable for surface mounting and supplied on tape and reel. Key electrical parameters include a gate charge of 6nC (max) at 4.5V and an input capacitance of 380pF (max) at 10V. The operating temperature range extends to 150°C (TJ). This MOSFET array is utilized in applications requiring efficient power switching and management within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 520mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 10V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-HUSON (2x2) |
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