PMDPB56XN,115
MOSFET 2N-CH 30V 3.1A 6HUSONManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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NXP USA Inc. presents the PMDPB56XN-115, a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 3.1A at 25°C. The low on-resistance of 73mOhm maximum at 3.1A and 4.5V Vgs, combined with a logic-level gate, ensures optimal performance in power management circuits. With a maximum power dissipation of 510mW and a 6-HUSON (2x2) surface mount package, this MOSFET array is suitable for compact designs. Key parameters include a Gate Charge (Qg) of 2.9nC (max) at 4.5V and an Input Capacitance (Ciss) of 170pF (max) at 15V. The device operates across a temperature range of -55°C to 150°C (TJ). This NXP USA Inc. MOSFET array is commonly utilized in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 510mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 15V |
| Rds On (Max) @ Id, Vgs | 73mOhm @ 3.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-HUSON (2x2) |
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