PMDPB42UN,115
MOSFET 2N-CH 20V 3.9A 6HUSONManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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NXP USA Inc. presents the PMDPB42UN-115, a dual N-channel MOSFET array designed for surface mount applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.9A at 25°C. The low Rds On of 50mOhm at 3.9A and 4.5V, coupled with a logic-level gate, makes it suitable for efficient switching. Key parameters include a maximum power dissipation of 510mW, input capacitance (Ciss) of 185pF at 10V, and gate charge (Qg) of 3.5nC at 4.5V. The device operates within a temperature range of -55°C to 150°C and is supplied in a 6-HUSON (2x2) package, delivered on tape and reel. This MOSFET array finds application in portable electronics and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 510mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 185pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-HUSON (2x2) |
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