PMDPB38UNE,115
MOSFET 2N-CH 20V 4A 6HUSONManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
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NXP USA Inc. Dual N-Channel MOSFET array, part number PMDPB38UNE-115, offers 20V Vdss and 4A continuous drain current per channel. This component features a logic-level gate and a low Rds(on) of 46mOhm at 3A, 4.5V. With a maximum power dissipation of 510mW and a gate charge of 4.4nC, it is suitable for applications requiring efficient switching. The 6-HUSON (2x2) package, supplied on tape and reel, facilitates surface mounting. Key parameters include a Vgs(th) of 1V at 250µA and input capacitance of 268pF at 10V. This MOSFET array is utilized in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 510mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 268pF @ 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-HUSON (2x2) |
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