PMDPB28UN,115
MOSFET 2N-CH 20V 4.6A 6HUSONManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. MOSFET Array, 2 N-Channel configuration, part number PMDPB28UN-115. This dual MOSFET device features a 20V Drain-to-Source Voltage (Vdss) and a continuous drain current (Id) of 4.6A at 25°C. The MOSFETs incorporate a logic-level gate for enhanced compatibility and offer a low Rds(on) of 37mOhm maximum at 4.6A and 4.5V Vgs. Key parameters include a maximum power dissipation of 510mW, a Gate Charge (Qg) of 4.7nC at 4.5V Vgs, and an input capacitance (Ciss) of 265pF at 10V Vds. The device is supplied in a 6-HUSON (2x2) surface mount package, presented on Tape & Reel (TR). Operating temperature range is -55°C to 150°C. This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 510mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 265pF @ 10V |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 4.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-HUSON (2x2) |
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