PHN210,118
MOSFET 2N-CH 30V 8SOManufacturer: NXP USA Inc.
Categories: FET, MOSFET Arrays
Quality Control: Learn More
NXP USA Inc. TrenchMOS™ PHN210-118 is a dual N-channel MOSFET array designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 30V and a maximum power dissipation of 2W. The MOSFET array offers a logic level gate and a low Rds(on) of 100mOhm at 2.2A and 10V. Key parameters include a gate charge (Qg) of 6nC at 10V and input capacitance (Ciss) of 250pF at 20V. The device operates within a temperature range of -65°C to 150°C and is supplied in an 8-SOIC package, presented on tape and reel. This MOSFET array is suitable for use in automotive and industrial automation applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | 8-SO |
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