1PS59SB16,115
DIODE ARR SCHOTT 30V 200MA SMT3Manufacturer: NXP USA Inc.
Categories: Diode Arrays
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NXP USA Inc. presents the 1PS59SB16-115, a Schottky diode array featuring a 1 pair common anode configuration. This component offers a reverse voltage rating of 30V and a continuous forward current of 200mA per diode. With a low forward voltage drop of 800mV at 100mA and a reverse leakage of 2µA at 25V, it demonstrates efficient rectification. The device boasts a fast reverse recovery time of 5ns, suitable for high-frequency applications. Manufactured using Schottky technology, it operates within a junction temperature range of -40°C to 125°C. The 1PS59SB16-115 is housed in a compact TO-236-3, SC-59, SOT-23-3 (SMT3) package, ideal for surface mounting. This component finds application in telecommunications, consumer electronics, and industrial control systems. The packaging is provided on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 5 ns |
| Technology | Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Supplier Device Package | SMT3; MPAK |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 100 mA |
| Current - Reverse Leakage @ Vr | 2 µA @ 25 V |
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