1PS59SB14,115
DIODE ARR SCHOTT 30V 200MA SMT3Manufacturer: NXP USA Inc.
Categories: Diode Arrays
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NXP USA Inc. presents the 1PS59SB14-115, a Schottky diode array configured in a series connection. This component offers a maximum DC reverse voltage of 30V and a per-diode average rectified forward current (Io) of 200mA. Featuring a forward voltage (Vf) of 800mV at 100mA and a reverse leakage current of 2µA at 25V, this device operates within a junction temperature range of up to 125°C. The 1PS59SB14-115 has a reverse recovery time (trr) of 5ns. It is supplied in a TO-236-3, SC-59, SOT-23-3 package, also known as SMT3 or MPAK, for surface mounting. This diode array finds application in compact power management and signal conditioning circuits across various electronics industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 5 ns |
| Technology | Schottky |
| Diode Configuration | 1 Pair Series Connection |
| Current - Average Rectified (Io) (per Diode) | 200mA (DC) |
| Supplier Device Package | SMT3; MPAK |
| Operating Temperature - Junction | 125°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 800 mV @ 100 mA |
| Current - Reverse Leakage @ Vr | 2 µA @ 25 V |
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