1PS181,135
DIODE ARRAY GP 80V 215MA SMT3Manufacturer: NXP USA Inc.
Categories: Diode Arrays
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NXP USA Inc. Diode Array, part number 1PS181-135. This component is a diode array featuring a single pair of common anode diodes. It is designed for surface mounting in the TO-236-3, SC-59, SOT-23-3 package. The device offers a maximum DC reverse voltage of 80 V and a per-diode average rectified forward current (Io) of 215mA. It exhibits a fast reverse recovery time (trr) of 4 ns and a low reverse leakage current of 500 nA at 80 V. The maximum forward voltage (Vf) is 1.2 V at 100 mA. Operating junction temperature can reach up to 150°C. This diode array is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 215mA (DC) |
| Supplier Device Package | SMT3; MPAK |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V |
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