1PS181,115
DIODE ARRAY GP 80V 215MA SMT3Manufacturer: NXP USA Inc.
Categories: Diode Arrays
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NXP USA Inc. diode array, part number 1PS181-115, offers a common anode configuration with a maximum reverse voltage of 80V. Each diode in the array handles a forward current of 215mA (DC) and exhibits a forward voltage of 1.2V at 100mA. Reverse leakage current is specified at 500 nA at 80V. This component features a fast recovery time of 4 ns. The device is housed in a TO-236-3, SC-59, SOT-23-3 (SMT3) package, suitable for surface mounting. Operating junction temperature is a maximum of 150°C. This diode array is commonly utilized in industrial and automotive applications requiring efficient signal switching and protection. The 1PS181-115 is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 215mA (DC) |
| Supplier Device Package | SMT3; MPAK |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V |
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