PMP5501G,115
SMALL SIGNAL BIPOLAR TRANSISTOR,Manufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays
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NXP USA Inc. offers the PMP5501G-115, a bipolar transistor array featuring two PNP matched pairs with a common emitter configuration. This device is designed for surface mount applications within a SOT-353 package. Key electrical characteristics include a collector-emitter breakdown voltage of 45V, a maximum collector current (Ic) of 100mA, and a transition frequency (fT) of 175MHz. The transistor exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V Vce. Power dissipation is rated at 300mW, with an operating junction temperature up to 150°C. The PMP5501G-115 is suitable for applications in consumer electronics and industrial automation requiring precise signal amplification and switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) Matched Pair, Common Emitter |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 175MHz |
| Supplier Device Package | SOT-353 |
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