BC847QAPN147
SMALL SIGNAL BIPOLAR TRANSISTORManufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 45V 100mA 100MHz 350mW Surface Mount DFN1010B-6
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | DFN1010B-6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |