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PEMH17,115

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PEMH17,115

NOW NEXPERIA PEMH17 - SMALL SIGN

Manufacturer: NXP USA Inc.

Categories: Bipolar Transistor Arrays, Pre-Biased

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NXP USA Inc. PEMH17-115 is a dual NPN pre-biased bipolar transistor array designed for surface mount applications. This component, part of the Nexperia PEMH17 series, features two NPN transistors with integrated base resistors, specifically R1 at 47kOhms and R2 at 22kOhms, simplifying circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 300mW. The saturation voltage (Vce Sat) is a maximum of 150mV at 500µA base current and 10mA collector current. The DC current gain (hFE) is a minimum of 60 at 5mA collector current and 5V Vce. This device is commonly utilized in applications such as digital logic interfacing, general switching, and signal conditioning within the automotive, industrial, and consumer electronics sectors. The component is supplied in a SOT-666 package.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max300mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Frequency - Transition-
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackageSOT-666

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