PEMB4,115
NOW NEXPERIA PEMB4 - SMALL SIGNAManufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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NXP USA Inc. PEMB4 is a dual PNP pre-biased bipolar junction transistor (BJT) in a SOT-666 package. This surface mount component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors of 10kOhms, simplifying biasing circuitry. The device exhibits a minimum DC current gain (hFE) of 200 at 1mA collector current and 5V Vce. Power dissipation is rated at 300mW. The PEMB4 is suitable for applications in consumer electronics, industrial automation, and general-purpose switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-666 |
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