PEMB1,115
NOW NEXPERIA PEMB1 - SMALL SIGNAManufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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The NXP USA Inc. PEMB1 is a dual PNP, pre-biased bipolar junction transistor designed for surface-mount applications. This component, housed in a SOT-666 package, features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 60 at 5mA and 5V. The integrated bias resistors are specified at 22kOhms for both base and emitter-base connections. With a maximum power dissipation of 300mW and a Vce saturation of 150mV at 500µA and 10mA, this device is suitable for various switching and amplification circuits. It finds application in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-666 |
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