PBLS4005V,115
TRANS NPN PREBIAS/PNP SOT666Manufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
NXP USA Inc. PBLS4005V-115 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a SOT-666 package. This device offers a collector current capability of 100mA for the NPN and 500mA for the PNP, with a transition frequency of 300MHz. It includes integrated base resistors (R1=47kO) and emitter base resistors (R2=47kO), simplifying external circuitry. Key specifications include collector-emitter breakdown voltages of 50V (NPN) and 40V (PNP), with saturation voltages of 150mV @ 500µA, 10mA (NPN) and 350mV @ 50mA, 500mA (PNP). The component exhibits a minimum DC current gain (hFE) of 80 @ 5mA, 5V and 150 @ 100mA, 2V. The PBLS4005V-115 is suitable for applications in consumer electronics, industrial control, and telecommunications equipment. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V / 150 @ 100mA, 2V |
| Frequency - Transition | 300MHz |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-666 |