PBLS4004V,115
TRANS NPN PREBIAS/PNP SOT666Manufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
NXP USA Inc. PBLS4004V-115 is a dual-transistor device featuring a pre-biased NPN and a PNP transistor in a SOT-666 package. This surface mount component offers a collector-emitter breakdown voltage of 50V for the NPN and 40V for the PNP. The NPN transistor boasts a maximum collector current of 100mA and a transition frequency of 300MHz, with a DC current gain (hFE) of 60 at 5mA, 5V and 150 at 100mA, 2V. The PNP transistor handles a maximum collector current of 500mA. Integrated base resistors of 22kOhms are present for both transistors. This device is suitable for applications in industrial automation, consumer electronics, and automotive systems requiring compact switching and amplification solutions. The PBLS4004V-115 is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V / 150 @ 100mA, 2V |
| Frequency - Transition | 300MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-666 |
Request a Quote
Clients Also Buy
PBLS2004D,115
TRANS NPN PREBIAS/PNP 0.6W 6TSOP
PEMB24,115
TRANS 2PNP PREBIAS 0.3W SOT666
PEMB9,315
TRANS 2PNP PREBIAS 0.3W SOT666
