PBLS4003V,115
TRANS NPN PREBIAS/PNP SOT666Manufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
NXP USA Inc. PBLS4003V-115 is a dual bipolar transistor array featuring one pre-biased NPN and one PNP transistor in a SOT-666 package. This device offers collector-emitter breakdown voltages of 50V for the NPN and 40V for the PNP. The NPN transistor provides a maximum collector current of 100mA and a transition frequency of 300MHz, with a minimum DC current gain (hFE) of 30 @ 5mA, 5V. The PNP transistor supports a maximum collector current of 500mA and exhibits a minimum DC current gain (hFE) of 150 @ 100mA, 2V. Integrated base resistors (R1 and R2) are 10kOhms each. The component is surface mounted and supplied on tape and reel, dissipating a maximum power of 300mW. This device is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 150 @ 100mA. 2V |
| Frequency - Transition | 300MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-666 |
Request a Quote
Clients Also Buy
PBLS2004D,115
TRANS NPN PREBIAS/PNP 0.6W 6TSOP
PBLS2001S,115
TRANS NPN PREBIAS/PNP 1.5W 8SO
PEMB24,115
TRANS 2PNP PREBIAS 0.3W SOT666
