PBLS4002V,115
TRANS NPN PREBIAS/PNP SOT666Manufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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NXP USA Inc. PBLS4002V-115 is a dual, general-purpose bipolar transistor array in a SOT-666 surface mount package. This component integrates one NPN pre-biased transistor and one PNP transistor. The NPN device features a 4.7 kO base resistor (R1) and the PNP device includes a 4.7 kO base-emitter resistor (R2), simplifying circuit design by eliminating external biasing components. Key specifications include a collector-emitter breakdown voltage of 50V for the NPN and 40V for the PNP. The NPN transistor can handle up to 100mA collector current with a DC current gain (hFE) of 30 at 10mA, 5V. The PNP transistor supports up to 500mA collector current with an hFE of 150 at 100mA, 2V. Both transistors exhibit a transition frequency of 300MHz and a maximum power dissipation of 300mW. Applications span consumer electronics, industrial control, and communication systems where space-saving and simplified biasing are critical. The PBLS4002V-115 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V / 150 @ 100mA, 2V |
| Frequency - Transition | 300MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-666 |
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