PBLS4001V,115
TRANS NPN PREBIAS/PNP SOT666Manufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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NXP USA Inc. PBLS4001V-115 is a dual bipolar transistor array featuring one pre-biased NPN and one PNP transistor in a SOT-666 package. This component offers a collector-emitter breakdown voltage of 50V for the NPN and 40V for the PNP. The NPN transistor handles a maximum collector current of 100mA with a typical DC current gain (hFE) of 30 @ 20mA, 5V. The PNP transistor supports up to 500mA collector current with an hFE of 150 @ 100mA, 2V. With a transition frequency of 300MHz and a power dissipation of 300mW, this device is suitable for applications requiring compact switching and amplification. Integrated base resistors (R1 and R2) are 2.2kOhms, simplifying circuit design. This device finds application in industrial automation, consumer electronics, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 40V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V / 150 @ 100mA, 2V |
| Frequency - Transition | 300MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Supplier Device Package | SOT-666 |