PBLS2003S,115
TRANS NPN PREBIAS/PNP 1.5W 8SOManufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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The NXP USA Inc. PBLS2003S-115 is a dual-transistor device featuring one NPN and one PNP bipolar junction transistor (BJT) in a single 8-SOIC package. This pre-biased configuration simplifies circuit design by incorporating built-in base resistors. The NPN transistor offers a collector-emitter breakdown voltage of 50V with a maximum collector current of 100mA, a transition frequency of 100MHz, and a saturation voltage of 150mV at 500µA base current and 10mA collector current. The PNP transistor supports a collector-emitter breakdown voltage of 20V and a maximum collector current of 3A, with a saturation voltage of 355mV at 300mA base current and 3A collector current. Both transistors exhibit a minimum DC current gain (hFE) of 30 for the NPN at 5mA/5V and 150 for the PNP at 2A/2V. This component is suitable for applications requiring compact and efficient switching or amplification, often found in consumer electronics and industrial automation. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 1.5W |
| Current - Collector (Ic) (Max) | 100mA, 3A |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 20V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 1µA, 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V / 150 @ 2A, 2V |
| Frequency - Transition | 100MHz |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | 8-SO |
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