PBLS2002S,115
TRANS NPN PREBIAS/PNP 1.5W 8SOManufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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NXP USA Inc. PBLS2002S-115 is a bipolar transistor array featuring one pre-biased NPN and one PNP transistor in an 8-SOIC package. This device offers a 50V collector-emitter breakdown voltage for the NPN and 20V for the PNP. The NPN transistor supports a collector current of up to 100mA with a minimum DC current gain (hFE) of 30 at 10mA and 5V, and a saturation voltage of 150mV at 500µA/10mA. The PNP transistor handles up to 3A with a minimum hFE of 150 at 2A and 2V, and a saturation voltage of 355mV at 300mA/3A. Both transistors have a transition frequency of 100MHz. Integrated base resistors are specified as 4.7kOhms for R1 and 4.7kOhms for R2 where applicable. The maximum power dissipation is 1.5W. This component is commonly utilized in industrial, automotive, and consumer electronics applications for switching and amplification circuits. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 1.5W |
| Current - Collector (Ic) (Max) | 100mA, 3A |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 20V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 1µA, 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V / 150 @ 2A, 2V |
| Frequency - Transition | 100MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | 8-SO |
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