PBLS2001S,115
TRANS NPN PREBIAS/PNP 1.5W 8SOManufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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NXP USA Inc. PBLS2001S-115 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This device is packaged in an 8-SOIC format for surface mounting. The NPN transistor offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a transition frequency of 100MHz. The PNP transistor supports a collector-emitter breakdown voltage of 20V and a maximum collector current of 3A. Both transistors incorporate integrated base resistors (R1 = 2.2kO, R2 = 2.2kO) simplifying circuit design. Typical applications include industrial automation, consumer electronics, and general-purpose switching. The component is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 1.5W |
| Current - Collector (Ic) (Max) | 100mA, 3A |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 20V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 355mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 1µA, 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V / 150 @ 2A, 2V |
| Frequency - Transition | 100MHz |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Supplier Device Package | 8-SO |
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