PBLS1504V,115
TRANS NPN PREBIAS/PNP SOT666Manufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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NXP USA Inc. PBLS1504V-115 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a SOT-666 package. This device offers a collector-emitter breakdown voltage of 50V for the NPN and 15V for the PNP. The maximum collector current is specified at 100mA for the NPN and 500mA for the PNP, with typical DC current gain (hFE) of 60 @ 5mA, 5V for the NPN and 150 @ 100mA, 2V for the PNP. The frequency transition is 280MHz, and the maximum power dissipation is 300mW. Integrated base resistors of 22kOhms are included. This component is commonly utilized in industrial automation and consumer electronics applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 15V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA, 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V / 150 @ 100mA, 2V |
| Frequency - Transition | 280MHz |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-666 |
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