PBLS1502V,115
TRANS NPN PREBIAS/PNP SOT666Manufacturer: NXP USA Inc.
Categories: Bipolar Transistor Arrays, Pre-Biased
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NXP USA Inc. PBLS1502V-115 is a dual bipolar transistor array featuring one pre-biased NPN and one PNP transistor in a SOT-666 package. This component offers collector-emitter breakdown voltages of 50V for the NPN and 15V for the PNP. The NPN transistor supports a maximum collector current (Ic) of 100mA with a typical Vce(sat) of 150mV at 500µA base current and 10mA collector current. The PNP transistor can handle up to 500mA collector current with a Vce(sat) of 250mV at 50mA base current and 500mA collector current. Both transistors exhibit a minimum DC current gain (hFE) of 30 at 10mA collector current for the NPN and 150 at 100mA collector current for the PNP. The frequency range for transition is 280MHz, with a maximum power dissipation of 300mW. Integrated base resistors of 4.7kOhms are included. This device is commonly utilized in consumer electronics and industrial control applications. The product is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 100mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 15V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA, 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V / 150 @ 100mA, 2V |
| Frequency - Transition | 280MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-666 |
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