PRF957,115
RF TRANS NPN 10V 8.5GHZ SOT323-3Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. PRF957-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 10V and a maximum collector current of 100mA. It exhibits a transition frequency of 8.5GHz and a power dissipation of 270mW. The DC current gain (hFE) is a minimum of 50 at 5mA and 6V. Noise figure typically ranges from 1.3dB to 1.8dB across the 1GHz to 2GHz frequency spectrum. The device is supplied in an SC-70 (SOT-323) surface mount package, presented on tape and reel. This transistor finds application in wireless infrastructure, satellite communications, and general microwave circuitry. It is rated for operation up to 175°C junction temperature.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 270mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 6V |
| Frequency - Transition | 8.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz |
| Supplier Device Package | SC-70 |
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