PRF949,115
RF TRANS NPN 10V 9GHZ SC75Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. PRF949-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 10V and a maximum collector current of 50mA. It operates at a transition frequency of 9GHz, with typical noise figures of 1.5dB to 2.5dB at 1GHz. The device is rated for a maximum power dissipation of 150mW and has a minimum DC current gain (hFE) of 100 at 5mA collector current and 6V collector-emitter voltage. Supplied in an SC-75 (SOT-416) surface mount package, this transistor is suitable for demanding applications in areas such as wireless communications and radar systems. The PRF949-115 is provided on a Tape & Reel (TR) for automated assembly processes. It operates within an ambient temperature range up to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 1GHz |
| Supplier Device Package | SC-75 |
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