PBR951,215
RF TRANS NPN 10V 8GHZ TO236ABManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. PBR951-215 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount component, packaged in a TO-236AB (SOT-23) configuration, features a collector-emitter breakdown voltage of 10V and a maximum collector current of 100mA. With a transition frequency of 8GHz, it offers a typical noise figure ranging from 1.3dB to 2dB across the 1GHz to 2GHz frequency band. The device supports a maximum power dissipation of 365mW and an operating junction temperature of up to 175°C. Its DC current gain (hFE) is a minimum of 50 at 5mA collector current and 6V Vce. This component is commonly utilized in wireless communication systems and other RF circuitry. It is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 365mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 6V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2dB @ 1GHz ~ 2GHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
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